SIR470DP Vishay Siliconix, SIR470DP Datasheet - Page 3

• Manufacturer Part Number: SIR470DP
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68899
S-82295-Rev. A, 22-Sep-08
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
10
80
64
48
32
16
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
V
GS
0.5
16
21
V
= 10 thru 4 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
I
DS
V
D
- Total Gate Charge (nC)
V
GS
GS
- Drain Current (A)
= 10 V
Gate Charge
1.0
42
32
= 4.5 V
= 10 V
V
DS
= 20 V
1.5
48
63
V
GS
V
= 3 V
DS
= 30 V
2.0
64
84
New Product
105
2.5
80
7500
6000
4500
3000
1500
1.8
1.5
1.2
0.9
0.6
10
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
T
I
D
C
= 20 A
= 125 °C
T
1
8
V
C
V
Transfer Characteristics
DS
GS
T
= 25 °C
0
C
J
C
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
16
Capacitance
2
V
50
GS
Vishay Siliconix
= 10 V
24
3
75
V
GS
SiR470DP
T
C
= 4.5 V
100
= - 55 °C
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32
4
125
150
40
5
3