SIR470DP Vishay Siliconix, SIR470DP Datasheet - Page 4

• Manufacturer Part Number: SIR470DP
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

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SiR470DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
J
0.8
= 25 °C
Limited by R
0.01
100
100
0.1
10
I
D
1
0.01
= 5 mA
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
A
GS
DS(on)
= 25 °C
New Product
> minimum V
1.2
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
10
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-82295-Rev. A, 22-Sep-08
Document Number: 68899
6
7
1
T
I
T
D
J
J
8
= 20 A
= 125 °C
= 25 °C
9
10
1
0