IPD088N06N3G Infineon Technologies, IPD088N06N3G Datasheet
IPD088N06N3G
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IPD088N06N3G Summary of contents
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Type OptiMOS (TM) 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R • Very low on-resistance R • N-channel, normal level • 100% avalanche ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 200 10 V 180 160 140 120 100 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance DS(on -60 -20 11 Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 ...
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PG-TO252 (D-Pak) Rev. 2.0 page 8 IPD088N06N3 G 2008-11-26 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...