IPD088N06N3G Infineon Technologies, IPD088N06N3G Datasheet - Page 4

• Manufacturer Part Number: IPD088N06N3G
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
80
70
60
50
40
30
20
10
10
10
10
10
10
0
DS
-1
3
2
1
0
0
C
10
); T
)
-1
C
p
limited by on-state
resistance
=25 °C; D =0
50
10
0
T
V
C
100
DS
[°C]
[V]
10
1
150
10 µs
100 µs
1 ms
1 µs
DC
10 ms
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
10
60
50
40
30
20
10
C
0
-1
-2
1
0
); V
10
0
p
)
0.02
0.01
-5
single pulse
0.05
0.2
0.5
0.1
GS
≥10 V
p
10
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPD088N06N3 G
150
10
-1
2008-11-26
200
10
0
Datasheet pdf - http://www.DataSheet4U.net/