BUZ100S Siemens Semiconductor Group, BUZ100S Datasheet - Page 5

• Manufacturer Part Number: BUZ100S
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
P
Safe operating area
I
parameter: D = 0, T
Semiconductor Group
D
tot
I
tot
D
= (V
= (T
10
10
10
10
180
140
120
100
80
60
40
20
W
A
0
3
2
1
0
DS
10
0
C
0
)
)
20
40
C
60
10
= 25°C
1
80
100 120 140
DC
t
p = 31.0µs
V
100 µs
1 ms
10 ms
10
2
T
V
C
°C
DS
180
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= (T
K/W
10
10
10
10
10
10
= (t
80
60
50
40
30
20
10
A
-1
-2
-3
-4
-5
0
C
0
10
0
)
-7
p
)
20
GS
10
single pulse
-6
40
p
10 V
/ T
10
60
-5
10
80
-4
100 120 140
10
-3
10
-2
BUZ 100 S
D = 0.50
30/Jan/1998
SPP77N05
10
T
t
0.20
0.10
0.05
0.02
0.01
p
°C
C
-1
s
180
10
0