BUZ100S Siemens Semiconductor Group, BUZ100S Datasheet - Page 6

• Manufacturer Part Number: BUZ100S
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
= V
2 x I
170
140
120
100
350
250
200
150
100
80
60
40
20
50
A
A
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
D
)
P
x R
tot
p
2
p
= 80 µs
= 170W
= 80 µs , T
DS(on)max
4
l
6
k
8
j
j
= 25 °C
10
D
= f (V
12
GS
14
)
i
g
e
c
a
h
f
d
b
16
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
V
V
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
5.0
20
6
Typ. drain-source on-resistance
R
parameter: t
R
DS (on)
DS (on)
0.050
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
= I
V
V
GS
GS
4.0
4.5
a
a
a
p
20
[V] =
[V] =
D
5.0
b
= 80 µs, T
)
b
40
5.5
c
c
6.0
d
60
6.5
e
d
j
= 25 °C
80
7.0
f
e
100
7.5
g
8.0
f
h
120
9.0
i
BUZ 100 S
g
30/Jan/1998
140 A 170
10.0
SPP77N05
j
I
D
h
20.0
k
k
i
j