BUZ100S Siemens Semiconductor Group, BUZ100S Datasheet - Page 7

• Manufacturer Part Number: BUZ100S
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
• Manufacturer: Siemens Semiconductor Group

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
DS (on)
C
DS (on)
0.050
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
10
10
pF
DS
-60
4
3
2
0
= (T
)
GS
D
5
j
-20
)
= 55 A, V
= 0V, f = 1MHz
10
20
15
GS
98%
typ
60
20
= 10 V
25
100
30
°C
T
V
V
j
DS
C
C
C
iss
oss
rss
180
40
7
Gate threshold voltage
V
parameter:V
Forward characteristics of reverse diode
I
parameter: T
V
F
GS(th)
I
GS(th)
F
= (V
10
10
10
10
5.0
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
= f (T
A
V
-60
SD
0.0
3
2
1
0
)
GS
j
)
0.4
=V
j
-20
, t
DS
p
= 80 µs
, I
0.8
D
20
= 130µA
1.2
T
T
T
T
j
j
j
j
60
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
1.6
100
2.0
140
BUZ 100 S
2.4
30/Jan/1998
SPP77N05
V
T
SD
j
V
V
max
typ
min
3.0
200