MT16LSDT6464AG-13E Micron, MT16LSDT6464AG-13E Datasheet - Page 11

• Manufacturer Part Number: MT16LSDT6464AG-13E
• Description: DRAM Module, SDRAM, 512MByte Density, 3.3V Supply, DIMM Package
• Manufacturer: Micron

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation, 256MB ......................................... 8W
Power Dissipation, 512MB ....................................... 16W
32, 64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - 256MB Module
(Notes: 1, 5, 6; notes appear following parameter tables); (V
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - 512MB Module
(Notes: 1, 5, 6; notes appear following parameter tables); (V
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled;
0V V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled;
0V V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
T
A ..................................................................................
Relative to V
Relative to V
OUT
OUT
DD
V
V
, V
DD
DD
DD
Q
Q
V
V
SS
SS
IN
IN
Q Supply
....................................... -1V to +4.6V
....................................... -1V to +4.6V
V
V
DD
DD
OUT
OUT
OUT
OUT
= 4mA)
= 4mA)
= -4mA)
= -4mA)
0°C to +70°C
11
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DD
DD
, V
, V
DD
DD
Q = +3.3V ±0.3V)
V
Q = +3.3V ±0.3V)
SYMBOL
SYMBOL
V
DD
DD
V
V
V
V
V
, V
V
V
V
I
, V
I
OZ
OZ
I
OH
I
OL
OH
OL
IH
IH
IL
I
I
IL
168-PIN SDRAM DIMMs
DD
DD
Q
Q
256MB / 512MB (x64)
M I N
M I N
-0.3
-0.3
-40
2.4
-80
-10
2.4
-5
3
2
–
3
2
–
V
V
DD
DD
M A X
M A X
3.6
0.8
0.4
3.6
0.8
0.4
40
80
10
5
–
–
+ 0.3
+ 0.3
UNITS NOTES
UNITS NOTES
©2001, Micron Technology, Inc.
µA
µA
µA
µA
ADVANCE
V
V
V
V
V
V
V
V
V
V
22
22
22
22