MT16LSDT6464AG-13E Micron, MT16LSDT6464AG-13E Datasheet - Page 21

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MT16LSDT6464AG-13E

Manufacturer Part Number
MT16LSDT6464AG-13E
Description
DRAM Module, SDRAM, 512MByte Density, 3.3V Supply, DIMM Package
Manufacturer
Micron
Datasheet
SERIAL PRESENCE-DETECT MATRIX (continued)
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
32, 64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01
99-125 MANUFACTURER-SPECIFIC DATA (RSVD)
36-61
65-71
73-90
95-98
BYTE
126
127
31
32
33
34
35
62
63
64
72
91
92
93
94
2. x = Variable Data.
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME,
t
COMMAND AND ADDRESS HOLD TIME,
t
DATA SIGNAL INPUT SETUP TIME,
DATA SIGNAL INPUT HOLD TIME,
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURING LOCATION
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
SYSTEM FREQUENCY
SDRAM COMPONENT & CLOCK DETAIL
MANUFACTURER’S JEDEC ID CODE (CONT.)
MODULE PART NUMBER (ASCII)
CMS
CMH
DESCRIPTION
t
t
DH
DS
t
t
AH,
AS,
100 MHz (-13E/-133/-10E)
ENTRY (VERSION)
1.5 (-13E/-133)
0.8 (-13E/-133)
1.5 (-13E/-133)
0.8 (-13E/-133)
REV. 1.2
MICRON
2 (-10E)
1 (-10E)
2 (-10E)
1 (-10E)
256MB
(-13E)
(-133)
(-10E)
21
0
MT8LSDT3264AG
168-PIN SDRAM DIMMs
256MB / 512MB (x64)
D1
AF
40
15
20
08
10
15
20
08
10
00
12
8B
19
2C
FF
01
02
03
04
05
06
01
02
03
04
00
64
xx
xx
xx
xx
MT16LSDT6464AG
©2001, Micron Technology, Inc.
ADVANCE
D2
1A
40
15
20
08
10
15
20
08
10
00
12
8C
2C
FF
01
02
03
04
05
06
01
02
03
04
00
64
FF
xx
xx
xx
xx

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