MT16LSDT6464AG-13E Micron, MT16LSDT6464AG-13E Datasheet - Page 15

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MT16LSDT6464AG-13E

Manufacturer Part Number
MT16LSDT6464AG-13E
Description
DRAM Module, SDRAM, 512MByte Density, 3.3V Supply, DIMM Package
Manufacturer
Micron
Datasheet
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear following parameter tables)
32, 64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
15
CL = 3
CL = 2
SYMBOL -13E
t
t
ROH(3)
ROH(2)
t
t
t
168-PIN SDRAM DIMMs
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
t
MRD
DQD
CCD
DQZ
DAL
PED
BDL
CDL
RDL
DPL
256MB / 512MB (x64)
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
-133
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
-10E UNITS NOTES
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
©2001, Micron Technology, Inc.
ADVANCE
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
15, 21
16, 21
16, 21
17
14
14
17
17
17
17
17
17
26
17
17

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