HMP525F7FFP4C-xx Hynix Semiconductor, HMP525F7FFP4C-xx Datasheet - Page 21
![no-image](/images/manufacturer_photos/0/3/320/hynix_semiconductor_sml.jpg)
HMP525F7FFP4C-xx
Manufacturer Part Number
HMP525F7FFP4C-xx
Description
240pin Fully Buffered DDR2 SDRAM DIMMs
Manufacturer
Hynix Semiconductor
Datasheet
1.HMP525F7FFP4C-XX.pdf
(26 pages)
Rev 1.2 / Feb. 2009
IDD Power Supply Currents Specifications.
SAC Timing Parameters by Speed Grade
Note:
1) Assure that Primary channel Drive strength at 100% with De-emphasis at -6.5dB Secondary channel drive strength
at 60% with De-emphasis at -3dB when enabled. Address and Data fields are pseudo-random, which provides a 50%
toggle rate on DRAM data lines and link lanes when data is being transferred.
Assuming 1 activate command and 1 read/write command per BL=4 transferBL=4.10 lanes southbound and 14 lanes
northbound are enabled and active (12 lanes NB if non-ECC DIMM).
SPD specific assumption:Number of devices on the specific DIMM assumed.Termination of command, address, and
control is actual value used on the DIMM. ECC or non-ECC as per the specific DIMM.
SPD specifies Delta TAMB power spec specific assumptions: Dual rank x8 ECC DIMM assumed (18 DRAM devices
present on DIMM)
Modeled with 27 ohm termination for command, address, and clocks, and 47 ohm termination for control.
ECC DIMM assumed (72 bit data, 14 lanes northbound). AMB specification specifies current for each rail.
Active_1 Total Power
Active_2 Total Power
Idd_Active_1 @1.8V
Idd_Active_2 @1.8V
Training Total Power
Power Supply
Icc_Active_1 @1.5V
Icc_Active_2 @1.5V
Idd_Training @1.8V
Icc_Training @1.5V
Idle_0 Total Power
Idle_1 Total Power
Idd_Idle_0 @1.8V
Idd_Idle_1 @1.8V
Icc_Idle_0 @1.5V
Icc_Idle_1 @1.5V
512MB(HMP564F7FFP8C)
4.167
5.217
6.570
Intel
7.020
7.620
2400
3100
3600
3300
4000
315
315
900
900
900
Y5
4.167
5.217
6.570
7.020
7.620
2400
3100
3600
3300
4000
IDT
315
315
900
900
900
5.067
6.380
8.613
8.051
9.363
3000
3875
4500
1035
4125
1035
5000
1035
IDT
315
315
S5
1
4.734
5.784
8.640
8.190
9.240
Intel
2400
3100
3600
1800
3300
1800
4000
1800
1GB(HMP512F7FFP8C)
630
630
240pin Fully Buffered DDR2 SDRAM DIMMs
Y5
4.734
5.784
8.640
8.190
9.240
2400
3100
3600
1800
3300
1800
4000
1800
IDT
630
630
10.476
11.226
5.634
6.947
9.914
3000
3875
4500
2070
4125
2070
5000
2070
IDT
630
630
S5
2GB(HMP525F7FFP4C)
11.880
11.430
11.480
Intel
5.868
6.918
2400
1260
3100
1260
3600
3600
3300
3600
4000
3600
Y5
11.880
11.430
11.480
5.868
6.918
2400
1260
3100
1260
3600
3600
3300
3600
4000
3600
IDT
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
W
W
W
W
W
Note1)
21