MT28F004B5 Micron, MT28F004B5 Datasheet - Page 23

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MT28F004B5

Manufacturer Part Number
MT28F004B5
Description
FLASH MEMORY
Manufacturer
Micron
Datasheet

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RECOMMENDED DC WRITE/ERASE CONDITIONS
Commercial Temperature (0°C ≤ T
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0°C ≤ T
NOTE: 1. WRITE operations are tested at V
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
PARAMETER/CONDITION
V
V
V
Boot block unlock voltage
V
PARAMETER/CONDITION
WORD WRITE CURRENT: V
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: V
BYTE WRITE CURRENT: V
ERASE CURRENT: V
ERASE CURRENT: V
ERASE SUSPEND CURRENT: V
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
PP
PP
PP
CC
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
voltage during WRITE/ERASE operation
WRITE/ERASE lockout voltage
2. Absolute WRITE/ERASE protection when V
3. When 5V V
4. For SmartVoltage-compatible production programming, 12V V
5. Applies to MT28F400B5 only.
6. Applies to MT28F004B5 and MT28F400B5 with BYTE = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be I
tested at V
be connected for up to 100 cummulative hours.
READ is executed while the device is in erase suspend mode.
CC
CC
CC
PP
voltages equal to or less than the previous WRITE.
and V
SUPPLY
SUPPLY
CC
PP
PP
CC
PP
SUPPLY
SUPPLY
are used, V
SUPPLY
SUPPLY
CC
PP
SUPPLY
SUPPLY
A
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
≤ +70°C) and Extended Temperature (-40°C ≤ T
CC
CC
/V
cannot exceed V
PP
voltages equal to or less than the previous ERASE, and READ operations are
PP
≤ V
SMART 5 BOOT BLOCK FLASH MEMORY
PPLK
.
PP
23
by more than 500mV during WRITE and ERASE operations.
1
PP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
is supported for a maximum of 100 cycles and may
SYMBOL
V
V
V
V
V
PPH
PPH
PPLK
LKO
HH
1
2
CC 12
SYMBOL
A
A
I
I
I
I
I
I
I
I
CC
CC
CC
CC
PP
PP
PP
PP
(5V V
≤ +85°C); V
≤ +85°C); V
MIN
11.4
11.4
4.5
10
11
12
4
5
6
7
9
2
CC
) plus read current if a
MAX UNITS NOTES
MAX UNITS NOTES
12.6
12.6
200
1.5
5.5
25
20
25
20
30
40
10
CC
CC
= +5V ±10%
= +5V ±10%
©2002, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
4Mb
2
3
4
5
5
6
6
7

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