MT28F004B5 Micron, MT28F004B5 Datasheet - Page 25

• Manufacturer Part Number: MT28F004B5
• Description: FLASH MEMORY
• Manufacturer: Micron

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES
Commercial Temperature (0°C ≤ T
+5V ±5%
NOTE: 1. Measured with V
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
AC CHARACTERISTICS
PARAMETER
Address setup time to WE# HIGH
Address hold time from WE# HIGH
Data setup time to WE# HIGH
Data hold time from WE# HIGH
CE# setup time to WE# LOW
CE# hold time from WE# HIGH
V
RP# HIGH to WE# LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
PP
PP
setup time to WE# HIGH
hold time from status data valid
2. RP# should be held at V
3. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
4. Polling status register before
5.
HH
HH
t
REL is required to relock boot block after WRITE or ERASE to boot block.
or WP# HIGH setup time to WE# HIGH
or WP# HIGH hold time from status data valid
PP
= V
PPH 1
HH
or WP# held HIGH until boot block WRITE or ERASE is complete.
= 5V.
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
t
WB is met may falsely indicate WRITE or ERASE completion.
SMART 5 BOOT BLOCK FLASH MEMORY
SYMBOL
t
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
VPS1
t
t
t
t
t
VPH
RHH
t
t
RHS
25
t
t
REL
WB
AH
DH
CH
AS
DS
CS
RS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
200
500
100
300
300
600
200
50
50
0
0
0
0
6
0
0
-6/-8/-8 ET
MAX
100
A
≤ +85°C); V
UNITS
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
CC
= +5V ±10% or
©2002, Micron Technology, Inc.
NOTES
4Mb
2, 3
1
2
3
3
3
4
3
2
5