MT28F008B3 Micron, MT28F008B3 Datasheet
MT28F008B3
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MT28F008B3 Summary of contents
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... MT28F800B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I 1 MARKING -9 GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are MT28F008B3 low-voltage, nonvolatile, electrically block-erasable (flash), MT28F800B3 programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 T bits). Writing and erasing the device is done with voltage of either 3 ...
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... A8 8 WE WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F008B3VG-9 B MT28F008B3VG-9 T MT28F008B3VG-9 BET MT28F008B3VG-9 TET 2 44-Pin SOP RP# PP A18 2 43 WE# A17 A10 A11 A12 ...
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... WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. FUNCTIONAL BLOCK DIAGRAM 16KB Boot Block 8KB Parameter Block 19 (20) 10 8KB Parameter Block 96KB Main Block 9 128KB Main Block (10) 128KB Main Block Addr. 128KB Main Block ...
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... V Supply Power Supply: +3.3V ±0.3V Supply Ground – No Connect: These pins may be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION (5V) and RP during a WRITE or 2 PPH IH (12V), and must be held at V during all ...
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... High 9Ch 9Ch High 9Dh 9Dh High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb High-Z High-Z A-1 High Data- Data-In Data-In X ...
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... TRUTH TABLE (MT28F008B3) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP 4 WRITE 4, 6 WRITE 5 READ ARRAY 8, 9 DEVICE IDENTIFICATION ...
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... SOP package.) This provides additional security for the core firmware during in-system firmware updates should an unintentional power fluctuation or system reset occur. The MT28F800B3 and MT28F008B3 are avail- able with the boot block starting at the bottom of the address space (“B” suffix) and the top of the address space (“ ...
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... See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F800B3 and MT28F008B3 feature a very low cur- rent, deep power-down mode. To enter this mode, the RP# pin is taken to V ±0.2V. In this mode, the current SS draw is a maximum of 8µ ...
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... ROM-resident applica- tions or operating systems that require in-system update capability. OUTPUT (READ) OPERATIONS The MT28F800B3 and MT28F008B3 feature three dif- ferent types of READs. Depending on the current mode of the device, a READ operation produces data from the memory array, status register or device identification register ...
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... When BYTE# is HIGH (word mode), data is input on DQ0– DQ15. COMMAND SET To simplify writing of the memory blocks, the MT28F800B3 and MT28F008B3 incorporate an ISM that controls all internal algorithms for writing and erasing the floating gate memory cells. An 8-bit command set is used to control the device. Details on how to sequence ...
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... S must be cleared by CLEAR STATUS REGISTER RESET. PP Reserved for future use. 11 status bits must be cleared 2–0 voltage. It does not monitor V PP voltage. The V PP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb status bit PP PP pin PP ...
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... READ X SRD 50h 20h WRITE BA D0h B0h WRITE X D0h 40h WRITE WA WD 10h WRITE WA WD Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb . PPH until the PPH NOTES ©2001, Micron Technology, Inc. ...
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... ERASE CONFIRM PP voltage error, with WRITE and ERASE errors the WP# pin set status bit (SR3) is set Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb . PPH PP ...
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... WRITE/ERASE CYCLE ENDURANCE The MT28F800B3 and MT28F008B3 are designed and fabricated to meet advanced firmware storage require- ments. To ensure this level of reliability, V 3.3V ±0. ±10% during WRITE or ERASE cycles. Due to process technology advances for application and production programming. POWER USAGE The MT28F800B3 and MT28F008B3 offer several power-saving features that may be utilized in the array read mode to conserve power ...
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... SMART 3 BOOT BLOCK FLASH MEMORY COMPLETE WRITE STATUS-CHECK 1 Start (WRITE completed SEQUENCE SR3 = 0? V Error PP YES NO SR4 = 0? BYTE/WORD WRITE Error YES WRITE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb 5 ...
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... COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE Error SR3 = 0? PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb 6 6 ...
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... SUSPEND 3. STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb ©2001, Micron Technology, Inc. ...
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... – 0. – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb NOTES NOTES µA µA µA µA ©2001, Micron Technology, Inc. ...
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... MAX UNITS NOTES 100 µ µ ±15 µ µ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb NOTES ...
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... MAX ACE 90 t AOE RWH 1,000 150 t ACE is affected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb 1 = +3.3V ±0.3V UNITS NOTES ©2001, Micron Technology, Inc. ...
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... MAX UNITS SYMBOL RWH VALID DATA -9/-9 ET MIN 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb DON’T CARE UNDEFINED MAX UNITS 1,000 ...
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... MAX UNITS SYMBOL RWH VALID DATA -9/-9 ET MIN 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb DON’T CARE UNDEFINED MAX UNITS 1,000 ...
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... PP 4. All currents are in RMS unless otherwise noted. 5. Applies to MT28F800B3 only. 6. Applies to MT28F008B3 and MT28F800B3 with BYTE# = LOW. 7. Parameter is specified when device is not accessed. Actual current draw will be I executed while the device is in erase suspend mode. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – ...
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... TYP MAX TYP MAX UNITS NOTES 0.5 7 0.4 7 2.8 14 1.5 14 1.5 – 1 – 1.5 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb NOTES ...
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... Command for next executed, status register operation issued checked for completion MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in DON’T CARE -9/-9 ET MAX UNITS µ ...
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... Command for next executed, status register operation issued checked for completion MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in DON’T CARE -9/-9 ET MAX UNITS µ ...
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... SEE DETAIL A MIN 27 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2001, Micron Technology, Inc. ...
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... SEE DETAIL A .047 (1.20) MAX MIN 28 .010 (0.25) .475 (12.07) .469 (11.91) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb GAGE PLANE .024 (0.60) .016 (0.40) ...
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... MAX GAGE PLANE .010 (0.25) .0315 (0.80) MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 8Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2001, Micron Technology, Inc. ...
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... Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s • MT28F800B3 only available in WG and SG packages • MT28F008B3 only available in VG package • Added 80ns access time for commercial and extended temperature ranges 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – ...