MT28F008B3 Micron, MT28F008B3 Datasheet - Page 26
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MT28F008B3
Manufacturer Part Number
MT28F008B3
Description
FLASH MEMORY
Manufacturer
Micron
Datasheet
1.MT28F008B3.pdf
(30 pages)
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A0–A18/(A19)
TIMING PARAMETERS
Commercial Temperature (0ºC
Extended Temperature (-40ºC
NOTE: 1. Address inputs are “Don’t Care” but must be held stable.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
SYMBOL
t
t
t
t
t
t
t
t
t
t
DQ0–DQ15
WC
CPH
CP
AS
AH
DS
DH
WS
WH
VPS1
DQ0–DQ7/
WP#
RP#
WE#
OE#
CE#
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit.
3. Either RP# at V
V
PP
2
3
3
V
V
V
V
PPH2
PPH1
IL
V
V
V
V
V
V
V
V
V
V
V
V
V
V
HH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
ERASE SETUP input
t WS
t RS
WRITE SETUP or
t CP
t DS
HH
t AS
or WP# HIGH unlocks the boot block.
Note 1
CMD
in
T
T
A
A
t AH
t WH
t WC
t CPH
+85ºC)
MIN
+70ºC)
200
t DH
50
50
90
20
50
0
0
0
0
CE#-CONTROLLED WRITE/ERASE
-9/-9 ET
t DS
WRITE or ERASE (block)
WRITE data or ERASE
address asserted, and
CONFIRM issued
t VPS1
t AS
t VPS2
t RHS
MAX
WRITE/ERASE CYCLE
Data-in
CMD/
A
IN
UNITS
[Unlock boot block]
[Unlock boot block]
SMART 3 BOOT BLOCK FLASH MEMORY
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t AH
[3.3V V
[5V V
t DH
t WED1/2/3/4
26
t WB
PP
PP
]
]
SYMBOL
t
t
t
t
t
t
t
t
t
t
VPS2
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
(SR7=0)
Status
executed, status register
checked for completion
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE or ERASE
(SR7=1)
Status
t VPH
t RHH
Command for next
1,000
MIN
100
100
100
500
200
100
operation issued
2
0
0
-9/-9 ET
©2001, Micron Technology, Inc.
DON’T CARE
CMD
MAX
in
8Mb
UNITS
ms
ms
ms
ns
ns
ns
µs
ns
ns
ns