MT28F008B3VG-8 BET Micron, MT28F008B3VG-8 BET Datasheet

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MT28F008B3VG-8 BET

Manufacturer Part Number
MT28F008B3VG-8 BET
Description
Flash Memory, 8Mbit, Sectored, 3.3V|5V Supply, TSOP I, 40-Pin
Manufacturer
Micron
Datasheet
FLASH MEMORY
FEATURES
• Eleven erase blocks:
• Smart 3 technology (B3):
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
• Byte- or word-wide READ and WRITE
OPTIONS
• Timing
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
NOTE:
8Mb Smart 3 Boot Block Flash Memory
Q10_2.p65 – Rev. 2, Pub. 3/01
(MT28F800B3):
80ns access
Top (7FFFFh)
Bottom (00000h)
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
40-pin TSOP Type I (MT28F008B3)
48-pin TSOP Type I (MT28F800B3)
44-pin SOP (MT28F800B3)
1 Meg x 8
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
3.3V ±0.3V V
3.3V ±0.3V V
5V ±10% V
1 Meg x 8/512K x 16
512K x 16/1 Meg x 8
1. This generation of devices does not support 12V V
compatibility production programming; however, 5V V
application production programming can be used with no
loss of performance.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MT28F800B3WG-8 BET
PP
CC
PP
application/production programming
Part Number Example:
application programming
MT28F008B3
MT28F800B3
MARKING
None
WG
VG
SG
ET
-8
B
T
PP
SMART 3 BOOT BLOCK FLASH MEMORY
PP
1
1
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
GENERAL DESCRIPTION
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a V
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V V
advances, 5V V
programming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
for the latest data sheet.
40-Pin TSOP Type I 48-Pin TSOP Type I
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
The MT28F008B3 and MT28F800B3 are organized
Refer to Micron’s Web site (www.micron.com/flash)
PP
is optimal for application and production
44-Pin SOP
CC
. Due to process technology
©2001, Micron Technology, Inc.
8Mb
PP

Related parts for MT28F008B3VG-8 BET

MT28F008B3VG-8 BET Summary of contents

Page 1

... Part Number Example: MT28F800B3WG-8 BET 8Mb Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 3 BOOT BLOCK FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I ...

Page 2

... WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F008B3VG-8 B MT28F008B3VG-8 T MT28F008B3VG-8 BET MT28F008B3VG-8 TET Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 44-Pin SOP RP# PP A18 2 43 WE# A17 ...

Page 3

BYTE# I/O Control Logic Addr. A0–A18/(A19) Buffer/ Latch A9 Power (Current) Control 1 WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. FUNCTIONAL ...

Page 4

... V Supply Power Supply: +3.3V ±0.3V Supply Ground – No Connect: These pins may be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION (5V) and RP during a WRITE or 2 PPH IH (12V), and must be held at V during all ...

Page 5

... High 9Ch 9Ch High 9Dh 9Dh High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb High-Z High-Z A-1 High Data- Data-In Data-In X ...

Page 6

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DQ0–DQ7 PP High-Z High-Z Data-Out High-Z 20h D0h 10h/40h Data-In FFh 20h D0h D0h 10h/40h Data-In Data-In FFh 89h ...

Page 7

... These commands control the operation of the PP ISM and the read path (i.e., memory array, ID register or pin before writing or 7 status, write status and PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb or when the HH ©2001, Micron Technology, Inc. ...

Page 8

... WP# pin does not apply to the SOP package.) The V the boot block is written to or erased. WORD ADDRESS Figure 1 Memory Address Maps Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 pin must (3.3V or 5V) when PP PPH BYTE ADDRESS ...

Page 9

... CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the device. A WRITE is used to input data to the memory array. The following section de- Micron Technology, Inc., reserves the right to change products or specifications without notice the device returns to the previous ...

Page 10

... When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed WP# be HIGH. A0–A18 (A19) pro- HH Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb ©2001, Micron Technology, Inc. ...

Page 11

... V is sampled for 3. after WRITE or ERASE CONFIRM is given must be cleared by CLEAR STATUS REGISTER RESET. PP Reserved for future use. Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 8Mb status bits must be cleared PP status bit ...

Page 12

... X 2 WRITE X 2 WRITE X 2 WRITE X 2 WRITE X Micron Technology, Inc., reserves the right to change products or specifications without notice brought the WP# pin be brought HIGH at the HH is brought The ISM now begins to PP PPH must be held SECOND ...

Page 13

... ERASE CONFIRM PP voltage error, with WRITE and ERASE errors the WP# pin set status bit (SR3) is set Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb . PPH PP ©2001, Micron Technology, Inc. ...

Page 14

... CC . When (3.3V) Address Data NOTE Power-Up/Reset Timing Diagram Micron Technology, Inc., reserves the right to change products or specifications without notice valid CC -GND-V CC Note VALID VALID t RWH UNDEFINED must be within the valid operating range before RP# CC goes HIGH ...

Page 15

... Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 8Mb Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 SMART 3 BOOT BLOCK FLASH MEMORY COMPLETE WRITE STATUS-CHECK 1 Start (WRITE completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 SEQUENCE SR3 = 0? V Error PP YES ...

Page 16

... COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE NO V Error SR3 = 0? PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb ©2001, Micron Technology, Inc. ...

Page 17

... SUSPEND 3. STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb ©2001, Micron Technology, Inc. ...

Page 18

... – 0. – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb NOTES NOTES µA µA µA µA ©2001, Micron Technology, Inc. ...

Page 19

... 100 ± Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb NOTES pF pF UNITS NOTES µA µA µA µA ©2001, Micron Technology, Inc. ...

Page 20

... MAX ACE 80 t AOE RWH 1,000 150 t ACE is affected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb 1 = +3.3V ±0.3V UNITS NOTES ©2001, Micron Technology, Inc. ...

Page 21

... MAX UNITS SYMBOL RWH VALID DATA MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DON’T CARE UNDEFINED -8/-8 ET MAX UNITS 1,000 ©2001, Micron Technology, Inc. ...

Page 22

... MAX UNITS SYMBOL RWH VALID DATA MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DON’T CARE UNDEFINED -8/-8 ET MAX UNITS 1,000 ©2001, Micron Technology, Inc. ...

Page 23

... 200 200 PP 6 plus read current if a READ Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb = +3.3V ±0. +3.3V ±0.3V UNITS NOTES ...

Page 24

... REL 100 3. TYP MAX TYP MAX UNITS NOTES 0.5 7 0.4 7 2.8 14 1.5 14 1.5 – 1 – 1.5 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb = +3.3V ±0.3V UNITS NOTES µ ...

Page 25

... VPH WRITE or ERASE Command for next executed, status register checked for completion MIN 100 1,000 100 100 100 500 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in operation issued DON’T CARE -8/-8 ET MAX UNITS µ ...

Page 26

... VPH WRITE or ERASE Command for next executed, status register checked for completion MIN 100 1,000 100 100 100 500 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in operation issued DON’T CARE -8/-8 ET MAX UNITS µ ...

Page 27

... SEE DETAIL A MIN 27 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2001, Micron Technology, Inc. ...

Page 28

... SMART 3 BOOT BLOCK FLASH MEMORY 48-PIN PLASTIC TSOP I (12mm x 20mm) .795 (20.20) .780 (19.80) .727 (18.47) .721 (18.31 SEE DETAIL A .047 (1.20) MAX MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 .010 (0.25) .475 (12.07) .469 (11.91) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A ©2001, Micron Technology, Inc. ...

Page 29

... MAX GAGE PLANE .010 (0.25) .0315 (0.80) MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 8Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2001, Micron Technology, Inc. ...

Page 30

... Added 80ns access time for commercial and extended temperature ranges 8Mb Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 SMART 3 BOOT BLOCK FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 8Mb ©2001, Micron Technology, Inc. ...

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