MT28F008B3VG-9BET Micron, MT28F008B3VG-9BET Datasheet - Page 15

• Manufacturer Part Number: MT28F008B3VG-9BET
• Description: 1Meg x 8 3V only, dual supply, smart 3 boot block flash memory
• Manufacturer: Micron

NOTE: 1. Sequence may be repeated for additional BYTE or WORD WRITEs.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
SELF-TIMED WRITE SEQUENCE
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
cleared.
or ERASE operations are allowed by the CEL.
(WORD OR BYTE WRITE)
WRITE Word or Byte
WRITE 40h or 10h
STATUS REGISTER
WRITE Complete
Check (optional)
Complete Status
V
Address/Data
PP
= 3.3V or 5V
SR7 = 1?
READ
Start
YES
2
3
NO
1
SMART 3 BOOT BLOCK FLASH MEMORY
15
COMPLETE WRITE STATUS-CHECK
Start (WRITE completed)
WRITE Successful
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SR3 = 0?
SR4 = 0?
YES
YES
SEQUENCE
NO
NO
V
BYTE/WORD WRITE Error
PP
Error
4, 5
©2001, Micron Technology, Inc.
8Mb
5