MT28F320J3 Micron, MT28F320J3 Datasheet - Page 48
![no-image](/images/no-image-200.jpg)
MT28F320J3
Manufacturer Part Number
MT28F320J3
Description
Q-FLASHTM MEMORY
Manufacturer
Micron
Datasheet
1.MT28F320J3.pdf
(52 pages)
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TIMING PARAMETERS
NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first edge
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
SYMBOL
t
t
t
t
t
CS
WP
DS
AS
CH
2. Erase resume, or program resume.
3. Read status, erase suspend or program suspend.
4. STS value will be:
of CE0, CE1, or CE2 that disables the device (see Table 2). STS is shown in its default mode (RY/BY#).
V
V
IH
IL
after READ STATUS command
after ERASE SUSPEND and PROGRAM SUSPEND commands
DQ0–DQ15
CEx (WE#)
WE# (CEx)
Addresses
Disabled
Disabled
Enabled
Enabled
V
OE#
RP#
STS
PEN
V
V
PENLK
PENH
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
t
CS
MIN
-11/-12/-15
70
50
55
0
0
t
DS
MAX
Note 2
Command
RESUME OPERATIONS
A
t
IN
STS
t
AS
UNITS
ns
ns
ns
ns
ns
t
WP
t
CH
t
DH
48
t
WEH
(
(
(
(
(
(
(
(
(
)
)
)
)
)
)
)
)
)
SYMBOL
t
t
t
t
(
(
(
(
(
(
(
(
DH
AH
STS
WEH
(
)
)
)
)
)
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
Command
Note 3
t
128Mb, 64Mb, 32Mb
AH
A
t
IN
STS
Q-FLASH MEMORY
UNDEFINED
Note 4
MIN
200
-11/-12/-15
0
0
©2002, Micron Technology, Inc.
MAX
200
UNITS
ns
ns
ns
ns