BF1205 Philips Semiconductors, BF1205 Datasheet - Page 13

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Notes
1. For the MOS-FET not in use: V
2. Measured in test circuit Fig.30.
GRAPHS FOR AMPLIFIER b
2003 Sep 30
handbook, halfpage
X
SYMBOL
mod
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
(4) V
V
Fig.18 Transfer characteristics; typical values;
(mA)
DS
I D
20
15
10
(b) = 5 V; V
5
0
G2-S
G2-S
G2-S
G2-S
0
amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
cross-modulation
DS
0.4
(a) = V
PARAMETER
G1-S
0.8
(a) = 0 V; T
(3)
(2)
(1)
(5) V
(6) V
(7) V
1.2
G1-S
G2-S
G2-S
G2-S
j
= 25 C.
= 2 V.
= 1.5 V.
= 1 V.
(4)
1.6
(a) = 0; V
V G1-S (V)
MGX445
input level for k = 1% at 0 dB AGC;
f
input level for k = 1% at 10 dB AGC;
f
input level for k = 1% at 40 dB AGC;
f
(5)
(6)
(7)
w
w
w
2
= 50 MHz; f
= 50 MHz; f
= 50 MHz; f
DS
(a) = 0.
13
CONDITIONS
unw
unw
unw
handbook, halfpage
= 60 MHz; note 2
= 60 MHz; note 2
= 60 MHz; note 2
(1) V
(2) V
(3) V
(4) V
V
Fig.19 Output characteristics; typical values;
G2-S
(mA)
I D
24
16
G1-S
G1-S
G1-S
G1-S
= 4 V; V
8
0
0
amplifier b.
(b) = 1.4 V.
(b) = 1.3 V.
(b) = 1.2 V.
(b) = 1.1 V.
DS
(a) = V
2
G1-S
4
(a) = 0 V; T
90
100
MIN.
(5) V
(6) V
(7) V
6
j
G1-S
G1-S
G1-S
= 25 C.
92
105
TYP.
Product specification
(b) = 1 V.
(b) = 0.9 V.
(b) = 0.8 V.
8
V DS (V)
BF1205
MGX446
MAX.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
dB V
dB V
dB V
UNIT