BF1205 Philips Semiconductors, BF1205 Datasheet - Page 19

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Sep 30
handbook, full pagewidth
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
I
Fig.31 Input admittance as a function of frequency;
D
DS
(mS)
(b)= 12 mA.
10
y is
10
(b) = 5 V; V
10
1
2
1
10
typical values; amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
R GEN
50
b is
g is
G1-S
V i
Fig.30 Cross-modulation test set-up for amplifier b.
(a) = 0 V;
f (MHz)
50
MGX457
50
4.7 nF
4.7 nF
4.7 nF
10
V AGC
V GG
3
5 V
10 k
g1 (a)
g1 (b)
R G1
150 k
g2
19
BF1205
handbook, halfpage
V
I
Fig.32 Forward transfer admittance and phase as
D
DS
(b) = 12 mA.
(mS)
|
y fs
10
(b) = 5 V; V
10
d (a)
s
d (b)
1
2
|
10
V DS (a)
V DS (b)
a function of frequency; typical values;
amplifier b.
5 V
5 V
4.7 nF
4.7 nF
L1
2.2 H
L2
2.2 H
G2-S
= 4 V; V
MDB813
DS
R L
50
(a) = V
10
2
|
y fs
G1-S
fs
|
(a) = 0 V;
f (MHz)
Product specification
BF1205
MGX458
10
3
(deg)
10
10
1
fs
2