BF1205 Philips Semiconductors, BF1205 Datasheet - Page 9

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
Fig.9
(1) V
(2) V
(3) V
V
(mA)
DS
I D
(a) = 5 V; V
12
10
DS
DS
DS
8
6
4
2
0
0
(b) = 5 V.
(b) = 4.5 V.
(b) = 4 V.
Drain current as a function of gate 2 and
drain supply voltage; typical values;
amplifier a.
G1-S
(b) = 0 V; Gate 1 (a) = open; T
2
(4) V
(5) V
DS
DS
(b) = 3.5 V.
(b) = 3 V.
4
V GG
(1)
j
V DS (V)
= 25 C.
(2)
(3)
(4)
(5)
MGX436
6
9
handbook, halfpage
Fig.10 Unwanted voltage for 1% cross-modulation
V
f
(dB V)
unw
V unw
DS
(a) = V
120
110
100
= 60 MHz; T
90
80
0
as a function of gain reduction; typical values;
amplifier a.
DS
(b) = 5 V; V
amb
= 25 C; see Fig.13.
20
G1-S
(b) = 0 V; f
gain reduction (dB)
w
40
= 50 MHz;
Product specification
BF1205
MGX437
60