ATF-13786 Agilent(Hewlett-Packard), ATF-13786 Datasheet

ATF-13786

Manufacturer Part Number

ATF-13786

Description

Surface Mount Gallium Arsenide FET for Oscillators

Manufacturer

Agilent(Hewlett-Packard)

Datasheet

1.ATF-13786.pdf (3 pages)

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Surface Mount Gallium

Arsenide FET for Oscillators

Technical Data

Features

• Low Cost Surface Mount

• High f

• Low Phase Noise at 10 GHz:

• Output Power at 10 GHz:

• Tape-and-Reel Packaging

Insertion Power Gain, Maximum

Available Gain, and Maximum Stable

Gain vs. Frequency.

Plastic Package

-110 dBc/Hz @ 100 kHz Typical

up to 10 dBm

Option Available

= 3 V, I

MAX

= 40 mA.

: 60 GHz Typical

MSG

FREQUENCY (GHz)

MAG

MSG

Description

Hewlett-Packard’s ATF-13786 is a

low cost Gallium Arsenide

Schottky barrier-gate field effect

transistor housed in a surface

mount plastic package. This

device is designed for use in low

cost, surface mount oscillators

operating over the RF and

microwave frequency ranges. The

ATF-13786 has sufficient gain for

easy use as a negative R cell,

without excess gain that can lead

to unwanted oscillations and

mode jumping. The gate structure

used in the fabrication of this

device results in phase noise

performance superior to that of

most other MESFETs. These

features make this device

particularly well suited for low

power (< +10 dBm) commercial

oscillator applications such as are

encountered in DBS, TVRO, and

MMDS television receivers, or

hand-held transceivers operating

in the 900 MHz, 2.4 GHz, and

5.7 GHz ISM bands.

5-43

ATF-13786

85 mil Plastic Surface

Mount Package

Pin Configuration

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

250 microns. Proven gold based

metallization systems and nitride

passivation assure a rugged,

reliable device.

GATE

SOURCE

5965-8721E

DRAIN

Related parts for ATF-13786

ATF-13786 Summary of contents

Page 1

... RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure ...

Page 2

... ATF-13786 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG [2] Thermal Resistance : jc ATF-13786 Electrical Specifications, (unless noted) Symbol Parameters and Test Conditions Insertion Power Gain ...

Page 3

... Part Number Ordering Information Part Number ATF-13786-TR1 ATF-13786-STR Please refer to the “Tape-and-Reel Packaging for Surface Mount Semiconductors” data sheet for more detailed information 0.38 0.015) 0.203 0.051 (0.006 0.002) 5- Ang. Mag. ...

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