ATF-10736 Agilent(Hewlett-Packard), ATF-10736 Datasheet

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ATF-10736

Manufacturer Part Number
ATF-10736
Description
0.512 GHz General Purpose Gallium Arsenide FET
Manufacturer
Agilent(Hewlett-Packard)
Datasheet

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DataSheet4U.com
www.DataSheet4U.com
0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
• High Associated Gain:
• Low Bias:
• High Output Power:
• Low Noise Figure:
• Cost Effective Ceramic
• Tape-and-Reel Packaging
Electrical Specifications, T
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Symbol
NF
G
P
G
g
I
V
DSS
13.0 dB Typical at 4 GHz
V
20.0 dBm typical P
1.2 dB Typical at 4 GHz
Microstrip Package
Option Available
m
1 dB
P
1 dB
A
DS
O
= 2 V, I
Optimum Noise Figure: V
Gain @ NF
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain: V
Transconductance: V
Saturated Drain Current: V
Pinchoff Voltage: V
DS
DS
= 4 V, I
= 25 mA
1 dB
[1]
O
DS
; V
= 70 mA
at 4 GHz
DS
Parameters and Test Conditions
= 2 V, I
DS
DS
= 2 V, I
= 2 V, V
DS
A
DS
DS
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
DS
= 25 C
= 25 mA
= 2 V, I
= 4 V, I
= 2 V, V
DS
GS
= 1 mA
= 0 V
DataSheet4U.com
DS
DS
GS
= 25 mA
= 70 mA
= 0 V
5-29
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
ATF-10736
36 micro-X Package
mmho
Units
dBm
mA
dB
dB
dB
dB
dB
dB
dB
V
Min.
12.0
-4.0
70
70
Typ. Max.
16.5
13.0
10.5
20.0
12.0
140
130
-1.3
5965-8698E
0.9
1.2
1.4
180
-0.5
1.4

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ATF-10736 Summary of contents

Page 1

... Pinchoff Voltage DataSheet4U.com Note: 1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.” Description The ATF-10736 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropri- ...

Page 2

... ATF-10736 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS P Total Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number ATF-10736-TR1 ATF-10736-STR For more information, see “ ...

Page 3

Typical Scattering Parameters, Freq GHz Mag. 0.5 .96 1.0 .92 2.0 .77 3.0 .59 4.0 .49 5.0 .43 6.0 .49 7.0 .57 8.0 .68 9.0 .73 10.0 .77 11.0 .82 12.0 .85 Typical Scattering Parameters, Freq. S ...

Page 4

Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 1 GATE SOURCE 2 1.45 0.25 2.54 (0.057 0.010) (0.100) 0.56 4.57 0.25 (0.022) 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = mm .xx ...

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