ATF35143 Agilent(Hewlett-Packard), ATF35143 Datasheet - Page 16

• Manufacturer Part Number: ATF35143
• Description: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: Agilent(Hewlett-Packard)

ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
ATF-35143 Die Model
E QUAT I O N C d s = 0 . 0 1 * W / 2 0 0
E QUAT I O N B e t a = 0 . 0 6 * W / 2 0 0
E QUAT I O N R d = 2 0 0 / W
E QUAT I O N R s = . 5 * 2 0 0 / W
E QUAT I O N C g s = 0 . 2 * W / 2 0 0
E QUAT I O N C g d = 0 . 0 4 * W / 2 0 0
E QUAT I O N L g = 0 . 0 3 * 2 0 0 / W
E QUAT I O N L d = 0 . 0 3 * 2 0 0 / W
E QUAT I O N L s = 0 . 0 1 * 2 0 0 / W
E QUAT I O N R c = 5 0 0 * 2 0 0 / W
GATE_IN
SOURCE
M o d e l s c a l fa c t o r s ( W = F E T w i d t h i n m i c r o n s )
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
L=Lc
L=La
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L
L
C
R=Rb
R=Rb
L=Lb
L=Lb
C=Ca
Gate model
LOSSYL
LOSSYL
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
*
STATZ MESFET MODEL
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
G
D
S
MODEL = FET
Parasitics
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
R=0.1 OH
R
W=400 m
16
R=Rb
R=Rb
R=Rb
L=Lb
L=Lb
L=Lb
*
LOSSYL
G
LOSSYL
LOSSYL
Breakdown
C=Cb
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
NFETMESFET
L=La * .5
L=Ld
C
L
L
Noise
FNC=01e+6
R=.17
P=.65
C=.2
SOURCE
S
DRAIN_OUT
MODEL=FET
D
S