ATF36077 Agilent(Hewlett-Packard), ATF36077 Datasheet
ATF36077
Manufacturer Part Number
ATF36077
Description
2-18 GHz Ultra Low Noise Pseudomorphic HEMT
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
1.ATF36077.pdf
(4 pages)
2–18 GHz Ultra Low Noise
Pseudomorphic HEMT
Technical Data
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
• High Associated Gain:
• Low Parasitic Ceramic
• Tape-and-Reel Packing
Applications
• 12 GHz DBS LNB (Low Noise
• 4 GHz TVRO LNB (Low Noise
• Ultra-Sensitive Low Noise
Note: 1. See Noise Parameter Table.
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Microstrip Package
Option Available
Block)
Block)
Amplifiers
Figure 1. ATF-36077 Optimum Noise
Figure and Associated Gain vs.
Frequency for V
Description
Hewlett-Packard’s ATF-36077 is
an ultra-low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), packaged in a low
parasitic, surface-mountable
ceramic package. Properly
matched, this transistor will
provide typical 12 GHz noise
figures of 0.5 dB, or typical 4 GHz
noise figures of 0.3 dB. Addition-
ally, the ATF-36077 has very low
noise resistance, reducing the
sensitivity of noise performance
to variations in input impedance
match, making the design of
broadband low noise amplifiers
much easier. The premium
sensitivity of the ATF-36077
makes this device the ideal choice
for use in the first stage of
extremely low noise cascades.
1.2
0.8
0.4
0
0
4
FREQUENCY (GHz)
DS
8
5-75
NF
= 1.5 V, I
[1]
12
Ga
D
16
= 10 mA.
20
25
20
15
10
ATF-36077
77 Package
Pin Configuration
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct Broad-
cast Satellite (DBS) Television
systems, C-band Television
Receive Only (TVRO) LNAs, or
other low noise amplifiers
operating in the 2-18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery (width)
of 200 microns. Proven gold based
metalization systems and nitride
passivation assure rugged, reliable
devices.
GATE
1
4
2
SOURCE
SOURCE
DRAIN
5965-8726E
3
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ATF36077 Summary of contents
Page 1
GHz Ultra Low Noise Pseudomorphic HEMT Technical Data Features • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain Typical at 12 GHz 17 ...
Page 2
ATF-36077 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate – Source Voltage GS V Gate-Drain Voltage GD I Drain Current D P Total Power Dissipation Input Power in max T Channel Temperature ...
Page 3
ATF-36077 Typical Scattering Parameters, Common Source 1 Freq GHz Mag. Ang. dB 1.0 0.99 -17 14.00 2.0 0.97 -33 13.81 3.0 0.94 -49 13.53 4.0 0.90 -65 13.17 ...
Page 4
ATF-36077 Typical Noise Parameters, Common Source [1] Freq. F min GHz dB 1 0.30 2 0.30 4 0.30 6 0.30 8 0.37 10 0.44 12 0.50 14 0.56 16 0.61 18 0.65 Note: ...