ATF501P8 Agilent(Hewlett-Packard), ATF501P8 Datasheet

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ATF501P8

Manufacturer Part Number
ATF501P8
Description
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
1.ATF501P8.pdf (20 pages)
Description
Agilent Technologies’s ATF-
501P8 is a single-voltage high
linearity, low noise E-pHEMT
housed in an 8-lead JEDEC-
standard leadless plastic chip
carrier (LPCC
device is ideal as a medium-
power amplifier. Its operating
frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package
measures only 2mm x 2mm x
0.75mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85ºC. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a
2. Refer to reliability datasheet for detailed
3. Conforms to JEDEC reference outline MO229
4. Linearity Figure of Merit (LFOM) is essentially
single positive V
negative gate voltage associated with
conventional depletion mode devices.
MTTF data.
for DRP-N.
OIP3 divided by DC bias power.
gs
[3]
, eliminating the need of
) package. The
Agilent ATF-501P8 High Linearity
Enhancement Mode
Pseudomorphic HEMT in
2x2 mm
Data Sheet
Pin Connections and
Package Marking
Pin 1 (Source)
Pin 4 (Source)
Note:
Package marking provides orientation and
identification:
“0P” = Device Code
“x” = Date code indicates the month of
Pin 7 (Drain)
Pin 2 (Gate)
manufacture.
Pin 8
Pin 6
Pin 5
Pin 3
Bottom View
Top View
2
0Px
LPCC
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
[3]
Package
[1]
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product
• Small package size: 2.0 x 2.0 x
• Point MTTF > 300 years
• MSL-1 and lead-free
• Tape-and-Reel packaging option
Specifications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM
• 65% PAE
• 23
Applications
• Front-end LNA Q2 and Q3, Driver or
• Driver Amplifier for WLAN, WLL/
• General purpose discrete E-pHEMT
specifications
0.75 mm
available
compression
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
RLL and MMDS applications
for other high linearity applications
o
C/W thermal resistance
3
[4]
[2]

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ATF501P8 Summary of contents

Page 1

Description Agilent Technologies’s ATF- 501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC- standard leadless plastic chip [3] carrier (LPCC ) package. The device is ideal as a medium- power amplifier. Its operating frequency range ...

Page 2

ATF-501P8 Absolute Maximum Ratings Symbol Parameter [2] V Drain–Source Voltage DS [2] V Gate–Source Voltage GS [2] V Gate Drain Voltage GD [2] I Drain Current DS I Gate Current GS [3] P Total Power Dissipation diss P RF Input ...

Page 3

ATF-501P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current ...

Page 4

Ohm 1.2 pF .02 RF Input Ohm 2.2 µF Gate Supply Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line ...

Page 5

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 280 mA 55 4.5V 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) ...

Page 6

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA 55 4.5V 50 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) ...

Page 7

ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 400 -40°C 25°C 85° 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 21. OIP3 ...

Page 8

ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 400 4.5V 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) ...

Page 9

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.915 -132.3 31.6 0.2 0.911 -156.2 26.2 0.3 0.910 -165.4 22.8 0.4 0.910 -170.9 20.3 0.5 0.908 -173.4 18.7 0.6 0.907 -176.1 17.1 0.7 0.908 -178.5 15.8 ...

Page 10

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.922 -131.5 31.1 0.2 0.914 -155.7 25.7 0.3 0.914 -165.2 22.3 0.4 0.911 -170.5 19.8 0.5 0.911 -173.3 18.3 0.6 0.912 -176.0 16.7 0.7 0.910 -178.3 15.4 ...

Page 11

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.911 -132.8 31.6 0.2 0.910 -156.5 26.2 0.3 0.911 -165.8 22.8 0.4 0.913 -171.1 20.3 0.5 0.907 -173.7 18.7 0.6 0.910 -176.3 17.2 0.7 0.910 -178.6 15.8 ...

Page 12

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.923 -133.9 30.6 0.2 0.922 -157.1 25.2 0.3 0.920 -166.1 21.8 0.4 0.920 -171.3 19.3 0.5 0.915 -173.9 17.7 0.6 0.917 -176.5 16.2 0.7 0.917 -178.9 14.8 ...

Page 13

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.924 -132.7 30.5 0.2 0.919 -156.5 25.0 0.3 0.918 -165.7 21.7 0.4 0.918 -171.0 19.2 0.5 0.918 -173.6 17.6 0.6 0.915 -176.2 16.0 0.7 0.915 -178.5 14.7 ...

Page 14

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.919 -134.2 30.8 0.2 0.920 -157.3 25.3 0.3 0.921 -166.4 21.9 0.4 0.918 -171.4 19.4 0.5 0.915 -174.0 17.8 0.6 0.916 -176.7 16.3 0.7 0.916 -178.9 15.0 ...

Page 15

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.914 -131.5 31.8 0.2 0.912 -155.7 26.4 0.3 0.914 -165.2 23.1 0.4 0.913 -170.5 20.6 0.5 0.909 -173.3 19.0 0.6 0.910 -176.0 17.4 0.7 0.911 -178.2 16.1 ...

Page 16

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.921 -130.1 31.8 0.2 0.914 -155.0 26.4 0.3 0.914 -164.6 23.0 0.4 0.913 -170.1 20.5 0.5 0.909 -172.9 18.9 0.6 0.909 -175.7 17.4 0.7 0.909 -178.1 16.0 ...

Page 17

ATF-501P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.904 -132.0 31.8 0.2 0.910 -156.2 26.4 0.3 0.912 -165.4 23.0 0.4 0.912 -170.7 20.5 0.5 0.907 -173.5 18.9 0.6 0.909 -176.1 17.4 0.7 0.909 -178.3 16.0 ...

Page 18

Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices ATF-501P8-TR1 3000 ATF-501P8-TR2 10000 ATF-501P8-BLK 100 LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 Bottom View A1 ...

Page 19

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Notes: Typical stencil thickness is ...

Page 20

Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

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