NE3210S01-T1 NEC, NE3210S01-T1 Datasheet - Page 2
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NE3210S01-T1
Manufacturer Part Number
NE3210S01-T1
Description
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Manufacturer
NEC
Datasheet
1.NE3210S01-T1.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE3210S01-T1
Manufacturer:
NEC
Quantity:
20 000
Part Number:
NE3210S01-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
NE3210S01-T1B
Manufacturer:
RENESAS
Quantity:
41 000
Part Number:
NE3210S01-T1B
Manufacturer:
NEC
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Characteristics
Symbol
V
I
I
GS (off)
NF
GSO
g
G
DSS
m
a
V
V
V
V
V
f = 12 GHz
A
GS
DS
DS
DS
DS
Data Sheet P14067EJ2V0DS00
= +25 °C)
= –3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
Test Conditions
DS
DS
DS
GS
= 100 A
= 10 mA
= 10 mA
= 0 V
MIN.
–0.2
12.0
15
40
–
–
TYP.
–0.7
0.35
13.5
0.5
40
55
MAX.
–2.0
0.45
10
70
–
–
NE3210S01
Unit
mA
mS
dB
dB
V
A