NE32400 NEC, NE32400 Datasheet
NE32400
Related parts for NE32400
NE32400 Summary of contents
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... BAND SUPER LOW NOISE AMPLIFIER DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. ...
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... T – Ambient Temperature – ˚ 112 Drain Gate Source ˚C) A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 0 V NE32400, NE24200 –0.2 V –0.4 V –0 – Drain to Source Voltage – ...
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... VOLTAGE CURRENT – Ratio of Drain Current to Zero-Gate Voltage Current – DSS NE32400, NE24200 MSG 21s – Frequency – GHz GHz ...
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... S-PARAMETERS START 1 GHz, STOP 26 GHz, STEP 1 GHz 26 GHz 4 RESTSTANCE COMPONENT ( ( GHz GHz S 11 NE32400, NE24200 50 1 GHz ...
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... NE32400, NE24200 S K MSG/MAG 22 ANG. (deg.) (dB) –10 0.05 24.9 –16 0.07 21.6 –23 0.08 19.9 –30 0.10 18.6 –36 0.18 17.7 –40 0.28 17.1 –46 0.30 16.1 –52 0.35 15.7 –55 0.40 15.5 –59 0.42 15.1 –62 0.44 14.7 –67 0.45 14.4 –72 ...
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... The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 6 NE32400, NE24200 CAUTION ...
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... NE32400, NE24200 7 ...
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... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 NE32400, NE24200 M4 94.11 ...