NE32500 NEC, NE32500 Datasheet - Page 5

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NE32500

Manufacturer Part Number
NE32500
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Manufacturer
NEC
Datasheet
CHIP HANDLING
DIE ATTACHMENT
environment.
BONDING
kept to minimum.
PRECAUTIONS
and does not preclude the necessity of a clean environment.
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
barrier gate.
Die attach operation can be accomplished with Au-Sn (within a 300 ˚C – 10 s) performs in a forming gas
Epoxy die attach is not recommend.
Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
As a general rule, the bonding operation should be kept within a 280 ˚C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
CAUTION
NE32500, NE27200
5

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