NE5500179A NEC, NE5500179A Datasheet - Page 4

• Manufacturer Part Number: NE5500179A
• Description: SILICON POWER MOS FET
• Manufacturer: NEC

4
30
25
20
15
10
28
27
26
25
24
23
30
25
20
15
10
5
5
0.0
–5
0
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
vs. GATE TO SOURCE VOLTAGE
V
I
f = 1.9 GHz
V
I
f = 460 MHz
Dset
Dset
V
f = 1.9 GHz
P
DS
DS
DS
in
= 3.5 V
= 4.5 V
= 100 mA
= 100 mA
= 18 dBm
= 3.5 V
5
0
Gate to Source Voltage V
1.0
Input Power P
Input Power P
10
5
P
P
I
I
P
out
out
D
D
I
out
D
2.0
15
10
in
in
(dBm)
(dBm)
20
15
3.0
GS
(V)
25
20
Data Sheet PU10118EJ01V1DS
4.0
30
25
500
400
300
200
100
0
500
400
300
200
100
0
500
400
300
200
100
0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
100
100
50
50
50
0
0
0
–5
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
I
f = 1.9 GHz
V
I
f = 460 MHz
Dset
Dset
V
f = 1.9 GHz
P
DS
DS
DS
in
= 3.5 V
= 100 mA
= 4.5 V
= 100 mA
= 18 dBm
= 3.5 V
5
0
Gate to Source Voltage V
1.0
Input Power P
Input Power P
10
5
add
d
2.0
15
10
in
in
add
d
(dBm)
(dBm)
20
15
3.0
GS
NE5500179A
add
d
(V)
25
20
4.0
30
25