NE600 NXP Semiconductors, NE600 Datasheet - Page 14

• Manufacturer Part Number: NE600
• Description: 1GHz LNA and mixer
• Manufacturer: NXP Semiconductors

Philips Semiconductors
16.5dB of gain with 2dB of noise figure. In this mode the current
consumption is increased to 13mA. But for hand-held equipment,
the average current consumption will be closer to 5-6mA. The other
advantage of the LNA through mode besides power savings is the
input overload characteristics. Due to the much higher input third
order intercept point of the LNA (+26dBm), the receiver is immune to
strong adjacent channel interference. Implementing this feature with
an FM/IF device such as the NE625/7 with fast RSSI response and
a window comparator toggling the LNA mode of NE/SA600, a fast
two-step AGC with response time less than 10 s can be achieved.
1993 Dec 15
1GHz LNA and mixer
www.datasheet4u.com
900MHz
INPUT
RF
15nH
L1
0.1 F
10nF
C3
C5
BYPASS
100pF
C4
C1
LO INPUT
100pF
V
CC
1
2
3
4
5
6
7
V
C
GND
RF IN
GND
BYPASS
GND
LO
C
IN
B
A1
LO
A
NE/SA600
Figure 12.
RF OUT
RF IN
60
ENABLE
V
GND
IF
GND
CCMX
OUT
MX
This is a very useful feature to equalize multipath fading effects in a
mobile radio system.
In conclusion, the NE/SA600 offers higher level of integration, higher
reliability, higher level of performance, ease of use, simpler system
design at a cost lower than the discrete multi-transistor
implementations. In addition, the NE/SA600 provides unique
features to enhance receiver performance which are almost
unattainable with discrete implementations.
MX
A2
A
14
13
12
10
11
9
8
10nF
V
C6
S1
CC
IN
R1
1k
10 H
BANDPASS
L2
FILTER
R2
1k
4.7pF
C2
OUT
10nF
C7
100pF
100pF
C8
C9
470nH
RF OUT
MIXER IN
L3
NE/SA600
Product specification
IF OUT
SR00093