NE600 NXP Semiconductors, NE600 Datasheet - Page 7

• Manufacturer Part Number: NE600
• Description: 1GHz LNA and mixer
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS
4.5V
1993 Dec 15
1GHz LNA and mixer
www.datasheet4u.com
V
CC
= V
LNA Input 1dB Gain Compression Point vs Frequency
–10
–15
–20
–25
–30
2.5
1.5
0.5
–10
–12
–14
–16
–18
–20
–5
–2
–4
–6
–8
CCMX
3
2
1
0
LNA Input Third-Order Intercept vs Frequency
0
0
800
800
800
LNA 50 Noise Figure vs Frequency
5.5V, Test Fig. 1, unless otherwise specified.
900
900
900
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 6. LNA Overload/Noise/Distortion Performance Characteristics
1000
1000
1000
F2 = F1 + 100kHz
TEST FIGURE 2
1100
1100
1100
1200
1200
1200
53
LNA Input 1dB Gain Compression Point vs Temperature
–10
–15
–20
–25
–30
–5
2.5
1.5
0.5
LNA Input Third-Order Intercept vs Temperature
–10
–12
–14
–16
–18
–20
0
–2
–4
–6
–8
3
2
1
0
–40
0
–40
–40
LNA 50 Noise Figure vs Temperature
–20
–20
–20
0
0
0
TEMPERATURE ( C)
TEMPERATURE ( C)
TEMPERATURE ( C)
20
20
20
40
40
40
F = 900MHz
F1 = 900MHz
F2 = 900.1MHz
TEST FIGURE 2
60
60
60
NE/SA600
Product specification
80
80
80
100
100
100
SR00087