NE685M23 NEC, NE685M23 Datasheet - Page 2

• Manufacturer Part Number: NE685M23
• Description: NPN SILICON TRANSISTOR
• Manufacturer: NEC

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
DATA SUBJECT TO CHANGE WITHOUT NOTICE
14
12
10
50
40
30
20
10
8
6
4
2
0
0
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 [phone] Telex 34-6393 FAX [phone]
1
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
GAIN BANDWIDTH PRODUCT vs.
Collector to Emitter Voltage, V
EXCLUSIVE NORTH AMERICAN AGENT FOR
PARAMETERS
COLLECTOR CURRENT vs.
IB 40 A step
Collector Current, I
COLLECTOR CURRENT
2
10
4
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
C
(mA)
V
f = 2 GHz
6
UNITS
CE
200 A
IB = 40 A
mW
400 A
mA
CE
= 3 V
V
V
V
C
C
(V)
1
100
8
(T
-65 to +150
RATINGS
A
(T
TBD
= 25 C)
150
30
9
5
2
A
= 25 C)
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
1000
100
10
60
50
40
30
20
10
10
0
0.001
8
6
4
2
0
0
NOISE FIGURE/ASSOCIATED GAIN vs.
1
V
CE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
V
f = 2 GHz
COLLECTOR CURRENT vs.
CE
= 3 V
0.2
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
= 3 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.1
0.4
10
1
0.6
C
C
NF
G
(mA)
A
(mA)
10
CE
0.8
V
CE
(V)
= 3 V
02/10/2000
100
100
1
20
16
12
8
4
0