NE69039 NEC, NE69039 Datasheet
NE69039
Manufacturer Part Number
NE69039
Description
NPN SILICON EPITAXIAL TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE69039.pdf
(2 pages)
www.DataSheet4U.com
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/2 watt of power
output at frequencies up to 2.0 GH
characteristics make it an ideal device for TX output stage in a
1.9 GH
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package
and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent
quality assurance standards to ensure highest reliability and
consistent superior performance.
ELECTRICAL CHARACTERISTICS
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
• 4 PIN MINI MOLD PACKAGE: NE69039
SYMBOLS
27.5 dBm TYP @F = 1.9 GH
Duty 1/8
I
I
T
h
CBO
EBO
P
G
ON
FE
-1
C
P
Z
digital cordless telephone (DECT or PHS). The part
NPN SILICON EPITAXIAL TRANSISTOR
Collector Cutoff Current, V
Emitter Cutoff Current, V
DC Current Gain, V
Output Power
Power Gain
Collector Efficiency
Maximum Device On Time
PACKAGE CODE
PART NUMBER
Z
, V
Z
with a 1:8 duty cycle. These
CE
PARAMETERS
CE
= 3.6 V, Class AB,
PRELIMINARY DATA SHEET
V
ICq = 1 mA (Class AB)
Duty 1/8
= 3.6 V, I
CE
EB
CB
= 3.6 V, f = 1.9 GH
= 1 V, I
= 5 V, I
C
= 100 mA
(T
C
A
E
= 0
= 25 C)
= 0
Z
OUTLINE DIMENSIONS
UNITS
dBm
M
dB
%
A
A
S
2.9
1.1
0.2 0.95
California Eastern Laboratories
+0.2
-0.1
0.85
0.6
0.8
PACKAGE OUTLINE 39
+0.10
-0.05
MIN
5.0
30
50
5˚
2
1
2.8
1.5
+0.2
+0.2
0 to 0.1
-0.3
-0.1
NE69039
NE69039
(Units in mm)
TYP
27.5
3
6.0
4
39
72
5˚
(LEADS 2, 3, 4)
0.4
0.16 +0.10
+0.10
-0.05
1.9
-0.06
1) Collector
2) Emitter
3) Base
4) Emitter
MAX
10.0
2.5
2.5
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NE69039 Summary of contents
Page 1
... V Z Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE69039 DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to op- erate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies characteristics make it an ideal device for TX output stage ...
Page 2
... IMPEDANCE LOOKING INTO DEVICE dBm FREQUENCY % mA db RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2 1 1.0 ORDERING INFORMATION PART NUMBER QTY NE69039-T1 3K/REEL Note: 1. Lead material: Cu Lead plating: PbSn DATA IN OUT j50 j100 j25 Z j10 IN Z OUT 0 -j10 -j100 -j25 ...