2SA1714 NEC, 2SA1714 Datasheet - Page 2

• Manufacturer Part Number: 2SA1714
• Description: PNP SILICON EPITAXIAL POWER TRANSISTOR
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%/pulsed
h
SWITCHING TIME (t
2
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
FE
Marking
CLASSIFICATION
h
FE1
Parameter
2,000 to 5,000
M
on
, t
V
V
V
Symbol
stg
h
h
CEO(SUS)
CE(sat)
BE(sat)
I
I
FE1
FE2
CBO
CEO
t
t
stg
on
t
, t
f
**
**
4,000 to 10,000
**
**
f
) TEST CIRCUIT
I
V
V
V
V
I
I
I
R
Refer to the test circuit.
C
C
C
C
CB
CE
CE
CE
L
L
= −3.0 A, I
= −1.5 A, I
= −1.5 A, I
= −1.5 A, I
= 33 Ω, V
= −100 V, I
= −100 V, R
= −2.0 V, I
= −2.0 V, I
Data Sheet D16124EJ1V0DS
B
B
B
B1
CC
= −3.0 mA, L = 1.0 mH
= −1.5 mA
= −1.5 mA
8,000 to 20,000
C
C
= −I
E
≅ −50 V
Conditions
BE
= −1.5 A
= −3.0 A
= 0
= ∞
B2
= −1.5 mA,
K
Collector current
waveform
Base current
waveform
2,000
1,000
−100
MIN.
TYP.
−0.9
−1.5
0.15
1.2
0.6
20,000
MAX.
−1.2
−2.0
−10
−10
Unit
µ A
µ A
µ s
µ s
µ s
V
V
V
2SA1714
−
−