2SA1988 NEC, 2SA1988 Datasheet - Page 2
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2SA1988
Manufacturer Part Number
2SA1988
Description
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.2SA1988.pdf
(4 pages)
2
CHARACTERISTICS (T
-100
100
-0.1
-10
80
60
40
20
-1
0
-1
T
Single Pulse
FORWARD BIAS SAFE OPERATING AREA
C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 25 C
V
I
CE
C(Pulse)
I
C(DC)
T
- Collector to Emitter Voltage - V
C
- Case Temperature - C
-10
50
0.01
100
0.1
10
A
100
1
= 25 C)
-100
100
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10ms
100ms
200ms
10 m
-1000
150
PW - Pulse Width - s
100 m
140
120
100
-12
-10
80
60
40
20
-2
-8
-6
-4
1
0
0
20
V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
CE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
T
- Collector to Emitter Voltage - V
10
40
C
- Case Temperature - C
-10
60
Single Pulse
100
80
T
C
I
=25 C
B
20mA
60mA
40mA
=120mA
R
80mA
100mA
100 120 140 160
th (J-C)
-20
1 000
Pulsed
2SA1988
-30