BFG403W Philips Semiconductors, BFG403W Datasheet - Page 2

• Manufacturer Part Number: BFG403W
• Description: NPN 17 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
1998 Mar 11
V
V
I
P
h
C
f
G
F
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
C
T
FE
Low current
Very high power gain
Low noise figure
High transition frequency
Very low feedback capacitance.
Pager front ends
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors.
CBO
CEO
tot
re
NPN 17 GHz wideband transistor
max
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
PARAMETER
open emitter
open base
T
I
I
I
I
I
C
C
C
C
C
s
= 3 mA; V
= 0; V
= 3 mA; V
= 3 mA; V
= 1 mA; V
140 C
CB
= 2 V; f = 1 MHz
CE
CE
CE
CE
CAUTION
= 2 V; T
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
= 2 V; f = 900 MHz;
CONDITIONS
2
PINNING
handbook, halfpage
j
Marking code: P3.
= 25 C
PIN
1
2
3
4
Fig.1 Simplified outline SOT343R.
amb
amb
S
= 25 C
= 25 C
=
3
2
Top view
opt
emitter
base
emitter
collector
50
MIN.
MSB842
DESCRIPTION
4
1
Product specification
3
80
20
17
22
1
TYP.
BFG403W
10
4.5
3.6
16
120
MAX.
V
V
mA
mW
fF
GHz
dB
dB
UNIT