BFG403W Philips Semiconductors, BFG403W Datasheet - Page 4

• Manufacturer Part Number: BFG403W
• Description: NPN 17 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. Z
1998 Mar 11
V
V
V
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
(BR)CBO
(BR)CEO
(BR)EBO
L1
= 25 C unless otherwise specified.
c
e
re
NPN 17 GHz wideband transistor
max
21
S
max
2
is optimized for noise; Z
is the maximum power gain, if K > 1. If K < 1 then G
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
PARAMETER
L
is optimized for gain.
I
I
I
I
I
I
I
see Fig.4
I
T
I
T
I
T
I
T
I
T
I
I
I
Z
I
Z
C
C
E
E
C
E
C
C
C
C
C
C
C
C
C
C
C
S
S
amb
amb
amb
amb
amb
S
S
= 2.5 A; I
= 0; V
= i
= 2.5 A; I
= 1 mA; I
= 3 mA; V
= i
= 0; V
= 3 mA; V
= 0.5 mA; V
= 3 mA; V
= 0.5 mA; V
= 3 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
=
=
= Z
= Z
e
c
= 25 C; see Fig.5
= 25 C; see Figs 6 and 8
= 25 C; see Figs 7 and 8
= 25 C; see Fig.8
= 25 C; see Fig.8
= 0; V
= 0; V
opt
opt
S opt
S opt
CB
CB
4
; see Fig.13
; see Fig.13
; Z
; Z
CONDITIONS
max
= 4.5 V
= 2 V; f = 1 MHz;
B
CE
CB
EB
CE
CE
CE
CE
CE
CE
CE
C
E
L
L
= 0
CE
CE
= 0
= 0
= Z
= Z
= MSG; see Figs 6, 7 and 8.
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; see Fig.3
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 900 MHz;
= 2 V; f = 2 GHz;
= 1 V; f = 900 MHz;
= 1 V; f = 900 MHz;
= 1 V; f = 900 MHz;
= 1 V; f = 900 MHz;
L opt
L opt
; note 2
; note 2
10
4.5
1
50
MIN.
80
170
315
20
17
20
22
5
14
1
1.6
6
TYP.
5
Product specification
BFG403W
15
120
MAX. UNIT
V
V
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dBm
V
nA
fF
dBm