BFG403W Philips Semiconductors, BFG403W Datasheet - Page 9

• Manufacturer Part Number: BFG403W
• Description: NPN 17 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
SPICE parameters for the BFG403W die
1998 Mar 11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
NPN 17 GHz wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER
5.554
145.0
0.993
31.12
35.75
35.35
3.000
11.37
0.985
1.874
0.014
57.08
1.546
122.4
0.000
52.45
1.511
15.12
1.500
1.110
3.000
36.61
900.0
0.346
4.122
68.20
2.004
0.179
0.000
16.21
556.9
0.207
0.500
00.00
78.59
418.3
0.239
0.550
VALUE
aA
V
mA
fA
V
A
aA
A
eV
fF
mV
ps
V
A
deg
fF
mV
ns
fF
mV
UNIT
9
Notes
1. These parameters have not been extracted, the
2. Bonding pad capacity C
3. Bonding pad capacity C
List of components (see Fig.14)
Note
1. External emitter inductance to be added separately
handbook, halfpage
39
40
41
C
C
C
L1
L2
L3 (note 1)
SEQUENCE No.
be
cb
ce
QL
f
c
(2)(3)
(2)
(3)
default values are shown.
resistance R
resistance R
due to the influence of the printed-circuit board.
B
= scaling frequency = 1 GHz.
B
Fig.14 Package equivalent circuit SOT343R2.
DESIGNATION
= 50; QL
C be
L1
E
= 50; QL
sb1
sb2
between B and E .
between C and E .
C
R
R
B,E
PARAMETER
bp
sb1
sb2
(f) = QL
B'
C cb
bp
bp
E'
E
B,E
80
2
80
1.1
1.1
0.25
L3
in series with substrate
in series with substrate
C'
(f/f
VALUE
c
)
Product specification
145
25
19
VALUE
BFG403W
C
fF
fF
fF
nH
nH
nH
MGD956
L2
ce
fF
UNIT
UNIT
C