BFG505W Philips Semiconductors, BFG505W Datasheet
BFG505W
Available stocks
Related parts for BFG505W
BFG505W Summary of contents
Page 1
... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BFG505W; BFG505W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 M3D123 1998 Oct 02 ...
Page 2
... mA GHz mA 900 MHz 1.25 mA GHz s opt Product specification BFG505W; BFG505W/X DESCRIPTION BFG505W 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter Top view MBK523 Fig ...
Page 3
... Fig.2 Power derating curve. 1998 Oct 02 CONDITIONS open emitter open collector see Fig.2; note MBG248 150 200 Product specification BFG505W; BFG505W/X MIN. MAX 2.5 18 500 65 +150 175 CONDITIONS VALUE 85 C; note 1 180 UNIT ...
Page 4
... I = 1.25 mA opt GHz mA 900 MHz amb note 2 is zero amb f = 904 MHz Product specification BFG505W; BFG505W/X MIN. TYP 2.5 60 120 9 0.3 0 ...
Page 5
... Oct 02 MRA639 handbook, halfpage (mA) I MLC033 (mA BFG505W; BFG505W/X 0 (pF) 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Product specification MLC032 (V) CB ...
Page 6
... MSG (mA GHz; V Fig.7 MLC036 handbook, halfpage gain (dB (MHz mA Product specification BFG505W; BFG505W MSG Gain as a function of collector current; typical values MSG ...
Page 7
... Fig.11 Associated available gain as a function of MLC039 handbook, halfpage F min (dB (MHz Fig.13 Associated available gain as a function 7 Product specification BFG505W; BFG505W 900 MHz 4 G ass 3 2 2000 MHz F min 1000 MHz 900 MHz 1 500 MHz 0 ...
Page 8
... 0.2 0.5 135 pot. unst. region 1 135 0.5 0.2 F min = 2.5 dB 0.2 0 0.2 0.5 135 BFG505W; BFG505W/X 1.0 0 0.6 0 min = 0.2 OPT MRA652 1.0 1.0 0 0.6 OPT 0 MRA653 1.0 ...
Page 9
... Oct 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 Product specification BFG505W; BFG505W/X 1 0.6 0 MHz MLC040 1.0 ); typical values MLC041 ); typical values. 21 ...
Page 10
... Fig.19 Common emitter output reflection coefficient (S 1998 Oct 135 3 GHz 40 MHz 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0.2 0 0.2 3 GHz 0.5 o 135 Product specification BFG505W; BFG505W MLC042 ); typical values. 12 1 0.6 0 MHz MLC043 1.0 ); typical values. 22 ...
Page 11
... Philips Semiconductors NPN 9 GHz wideband transistors SPICE parameters for the BFG505W(/X) die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...
Page 12
... VERSION IEC SOT343N 1998 Oct scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 12 BFG505W; BFG505W detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343N 0.1 ISSUE DATE ...
Page 13
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 BFG505W; BFG505W/X 13 Product specification ...
Page 14
... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG505W; BFG505W/X NOTES 14 Product specification ...
Page 15
... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG505W; BFG505W/X NOTES 15 Product specification ...
Page 16
... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...