BFG505W Philips Semiconductors, BFG505W Datasheet - Page 6

• Manufacturer Part Number: BFG505W
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1998 Oct 02
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
f = 900 MHz; V
I
C
gain
(dB)
gain
(dB)
= 1.25 mA; V
Fig.6
30
20
10
0
50
40
30
20
10
0
Fig.8
0
10
G UM
Gain as a function of collector current;
typical values.
MSG
CE
CE
= 6 V.
Gain as a function of frequency;
typical values.
= 6 V.
4
10
2
8
10
3
10
f (MHz)
I
C
MSG
G UM
(mA)
MLC034
MLC036
12
10
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
I
C
gain
(dB)
gain
(dB)
= 5 mA; V
Fig.7
30
20
10
0
50
40
30
20
10
0
Fig.9
0
10
MSG
CE
CE
G UM
Gain as a function of collector current;
typical values.
MSG
= 6 V.
= 6 V.
Gain as a function of frequency;
typical values.
BFG505W; BFG505W/X
4
10
2
8
10
Product specification
3
10
f (MHz)
I
C
G max
G UM
(mA)
MLC035
G max
MLC037
12
10
4