BFG505W Philips Semiconductors, BFG505W Datasheet - Page 4

• Manufacturer Part Number: BFG505W
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
1998 Oct 02
V
V
V
I
h
f
C
C
C
G
|S
F
P
ITO
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CES
(BR)EBO
L1
= 25 C unless otherwise specified.
c
e
re
NPN 9 GHz wideband transistors
UM
21
f
measured at 2f
C
p
|
2
UM
= 900 MHz; f
= 5 mA; V
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CE
q
p
= 6 V; R
= 902 MHz;
f
q
PARAMETER
= 898 MHz and 2f
L
= 50 ; T
amb
= 25 C;
q
f
p
= 904 MHz.
I
I
V
I
I
T
I
I
I
see Fig.4
I
T
I
T
I
T
f = 900 MHz
f = 900 MHz
f = 2 GHz
I
R
note 2
C
C
E
C
C
E
C
C
C
C
C
C
s
s
s
CB
amb
amb
amb
amb
L
= 2.5 A; I
= i
= 2.5 A ; I
= 10 A; R
= 5 mA; V
= 5 mA; V
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 50 ; T
= 6 V; I
e
c
= 25 C; see Fig.5
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
; I
; I
; I
CB
4
12
C
C
C
= 6 V; f = 1 MHz;
CONDITIONS
E
is zero.
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
CE
CE
CB
EB
CE
CE
CE
CE
amb
C
BE
= 0
E
= 0
= 0
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 6 V see Fig.3
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 0
= 25 C
G
UM
CE
= 6 V;
CE
CE
=
10
= 6 V;
= 6 V;
BFG505W; BFG505W/X
log
-------------------------------------------------------------- dB.
1
–
20
15
2.5
60
15
MIN.
S
11
S
2
21
120
9
0.3
0.4
0.2
19
12
16
1.2
1.6
1.9
4
10
TYP.
1
Product specification
2
–
S
22
50
250
1.7
2.1
MAX. UNIT
2
V
V
V
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
dBm
dBm