BFU630F NXP Semiconductors, BFU630F Datasheet
BFU630F
Manufacturer Part Number
BFU630F
Description
NPN wideband silicon RF transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFU630F.pdf
(12 pages)
www.DataSheet.co.kr
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz f
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
T
silicon technology
Product data sheet
Datasheet pdf - http://www.DataSheet4U.net/
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