BFU630F NXP Semiconductors, BFU630F Datasheet - Page 5

• Manufacturer Part Number: BFU630F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
Table 7.
T
[1]
BFU630F
Product data sheet
Symbol
IP3
j
Fig 2.
= 25
G
(mA)
(10) I
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C

25
20
15
10
C unless otherwise specified
5
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
B
B
B
B
B
B
B
B
B
B
Parameter
third-order intercept point
is the maximum power gain, if K > 1. If K < 1 then G
amb
Characteristics
= 200 A
= 180 A
= 160 A
= 140 A
= 120 A
= 100 A
= 80 A
= 60 A
= 40 A
= 20 A
= 25 C.
1
2
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
…continued
3
All information provided in this document is subject to legal disclaimers.
4
001aam813
V
CE
(V)
Rev. 1 — 15 December 2010
5
Conditions
I
Z
C
S
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 30 mA; V
= Z
p(max)
L
= 50 ; T
= MSG.
Fig 3.
CE
h
FE
200
150
100
= 2.5 V;
50
amb
0
0
V
DC current gain as a function of collector
current; typical values
CE
= 25 C
= 2 V; T
NPN wideband silicon RF transistor
amb
10
= 25 C.
Min Typ
-
-
-
-
20
BFU630F
© NXP B.V. 2010. All rights reserved.
I
C
25.5
26
26.5
27.5
001aam814
(mA)
Max Unit
-
-
-
-
30
5 of 12
dBm
dBm
dBm
dBm
Datasheet pdf - http://www.DataSheet4U.net/