BFU730F NXP Semiconductors, BFU730F Datasheet - Page 4

• Manufacturer Part Number: BFU730F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
T
BFU730F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
|s
NF
G
C
CBO
T
j
www.DataSheet4U.net
FE
(BR)CBO
(BR)CEO
21
CES
EBS
CBS
p(max)
ass
= 25
|
2
°
C unless otherwise specified
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2011
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
C
C
E
C
C
C
C
C
C
amb
amb
amb
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
= 0 mA; V
= 2.5 μA; I
= 1 mA; I
= 2 mA; V
= 25 mA; V
= 17 mA; V
= 17 mA; V
= 5 mA; V
= 5 mA; V
= 2 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 °C
= 25 °C
= 25 °C
B
CB
CE
CE
CE
E
NPN wideband silicon germanium RF transistor
= 0 mA
CE
CE
CE
= 0 mA
= 4.5 V
= 2 V
= 2 V; Γ
= 2 V; Γ
= 2 V; f = 2 GHz;
= 2 V; T
= 2 V; T
S
S
amb
amb
= Γ
= Γ
= 25 °C
= 25 °C
opt
opt
;
;
[1]
Min Typ
10
2.8
-
-
205 380
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU730F
© NXP B.V. 2011. All rights reserved.
-
-
5
-
206
442
55
55
29
28
26.5
18.5
12.5
27
25.5
23.5
16
10.5
0.50
0.50
0.55
0.80
1.30
25.0
23.5
21.5
15.0
11.0
Max Unit
-
-
30
100
555
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB