BFU730F NXP Semiconductors, BFU730F Datasheet - Page 6

• Manufacturer Part Number: BFU730F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BFU730F
Product data sheet
Fig 4.
Fig 6.
www.DataSheet4U.net
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
80
60
40
20
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 2 V; T
1
amb
amb
= 25 °C.
= 25 °C.
2
(dB)
G
30
20
10
0
3
0
All information provided in this document is subject to legal disclaimers.
V
001aam855
CB
(V)
10
4
MSG
Rev. 1 — 29 April 2011
20
Fig 5.
30
(GHz)
(1)
(2)
(3)
(4)
(5)
NPN wideband silicon germanium RF transistor
fT
60
40
20
0
G
0
V
Transition frequency as a function of collector
current; typical values
p(max)
40
CE
001aam857
I
C
= 2 V; f = 2 GHz; T
(mA)
10
50
20
amb
30
= 25 °C.
BFU730F
© NXP B.V. 2011. All rights reserved.
40
001aam856
I
C
(mA)
50
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