RX1214B130Y Philips Semiconductors, RX1214B130Y Datasheet

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RX1214B130Y

Manufacturer Part Number
RX1214B130Y
Description
NPN microwave power transistors
Manufacturer
Philips Semiconductors
Datasheet
Product specification
Supersedes data of November 1994
DATA SHEET
RX1214B80W; RX1214B130Y
NPN microwave power transistors
DISCRETE SEMICONDUCTORS
1997 Feb 14

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RX1214B130Y Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 ...

Page 2

... All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 14 RX1214B80W; RX1214B130Y QUICK REFERENCE DATA Microwave performance narrowband amplifi ...

Page 3

... Feb 14 open emitter open base open collector t 150 < note 1 MGA256 150 250 Product specification RX1214B80W; RX1214B130Y CONDITIONS MIN. 5% 150 MAX. UNIT 280 W +200 C ...

Page 4

... mA common-base test circuit as shown in Fig. (GHz) (V) 1.2 to 1.4 50 1.2 to 1.4 40 VALUE 0 Product specification RX1214B80W; RX1214B130Y CONDITIONS = 120 150 s; = 5%; p notes 1 and 2 MIN 1 (W) (dB) 130; typ. 140 7 ...

Page 5

... Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 40 mm handbook, full pagewidth input Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 14 RX1214B80W; RX1214B130Y 10.3 Fig.3 Broadband test circuit. 5 Product specification 40 mm MBC725 output C2 C1 MBC726 ...

Page 6

... 130 Broadband test circuit as shown in Fig.3. Fig.4 Power gain as a function of frequency. 1997 Feb 14 MGA258 handbook, halfpage 1.4 1.5 f (GHz) Class C pulse operation 5%. Broadband test circuit as shown in Fig.3. 6 RX1214B80W; RX1214B130Y 45 C (%) 1.1 1.2 1.3 = 500 130 Fig ...

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... OUT Fig.7 Load impedance as a function of frequency, associated with optimum input impedance. 1997 Feb 14 1 0.5 1.2 GHz Z i 1.3 0.2 0.5 1 1.4 GHz 0 0.5 0 1.3 1.4 GHz 0.2 0 1.2 GHz 0.2 0 Product specification RX1214B80W; RX1214B130Y MGA255 MGA254 ...

Page 8

... Philips Semiconductors NPN microwave power transistors PACKAGE OUTLINE handbook, full pagewidth 0.15 max 3.3 2.9 3.3 Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. 1997 Feb 14 RX1214B80W; RX1214B130Y 12.85 max 3 23 max seating plane 3.7 max 1 2 8.25 16.5 Fig.8 SOT439A. 8 Product specification ...

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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 14 RX1214B80W; RX1214B130Y 9 Product specification ...

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... Philips Semiconductors NPN microwave power transistors 1997 Feb 14 RX1214B80W; RX1214B130Y NOTES 10 Product specification ...

Page 11

... Philips Semiconductors NPN microwave power transistors 1997 Feb 14 RX1214B80W; RX1214B130Y NOTES 11 Product specification ...

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... Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...

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