RX1214B130Y Philips Semiconductors, RX1214B130Y Datasheet - Page 3

• Manufacturer Part Number: RX1214B130Y
• Description: NPN microwave power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 14
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CEO
CES
EBO
tot
NPN microwave power transistors
t
SYMBOL
p
Fig.2
= 150 s
P tot
(W)
300
200
100
0
50
Maximum power dissipation derating as a
function of mounting base temperature.
= 5%; P
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
tot max
50
= 280 W.
PARAMETER
150
T mb (
o
MGA256
C)
250
open emitter
open base
R
open collector
t
T
t
3
p
mb
BE
10 s; note 1
150 s;
< 75 C; t
= 0
CONDITIONS
RX1214B80W; RX1214B130Y
p
5%
150 s;
5%
MIN.
65
Product specification
65
15
60
3
9
280
+200
200
235
MAX.
V
V
V
V
A
W
UNIT
C
C
C