RX1214B130Y Philips Semiconductors, RX1214B130Y Datasheet - Page 4

• Manufacturer Part Number: RX1214B130Y
• Description: NPN microwave power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. See “Mounting recommendations in the General part of handbook SC19a” .
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
List of components (see Fig.3)
1997 Feb 14
R
R
Z
I
I
V
Class C
L1
C1
C2
C3
C4
OPERATION
mb
CBO
EBO
COMPONENT
th j-h
(BR)CES
MODE OF
th j-mb
th mb-h
NPN microwave power transistors
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
thermal resistance from junction to mounting base T
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
collector cut-off current
emitter cut-off current
collector-emitter breakdown voltage
t
t
p
p
= 150 s;
= 500 s;
0.5 mm copper wire
trimmer capacitor
chip capacitor
tantalum capacitor
feedthrough bypass capacitor
CONDITIONS
DESCRIPTION
PARAMETER
= 5%
= 10%
mb
PARAMETER
= 25 C in a common-base test circuit as shown in Fig.3.
1.2 to 1.4
1.2 to 1.4
(GHz)
f
0.6
10 F, 50 V
VALUE
I
I
I
5 pF
E
C
C
V
(V)
50
40
= 0; V
= 0; V
= 60 mA; V
4
CC
CONDITIONS
CB
EB
total length = 15 mm
= 50 V
= 1.5 V
t
notes 1 and 2
p
130; typ. 140
j
BE
= 150 s;
RX1214B80W; RX1214B130Y
= 120 C
DIMENSIONS
typ. 80
(W)
= 0
P
CONDITIONS
L
= 5%;
60
7; typ. 7.5
typ. 8.5
MIN.
(dB)
Tekelec, ref AT3-7271SL
Erie, ref.1250-003
G
p
CATALOGUE NO.
6
0.6
Product specification
MAX.
MAX.
1.75
0.2
0.4
35; typ. 39
typ. 40
(%)
mA
mA
V
C
UNIT
UNIT
K/W
K/W
K/W