PBSS4160K Philips Semiconductors, PBSS4160K Datasheet - Page 3

• Manufacturer Part Number: PBSS4160K
• Description: 1 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 12702
Objective data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
V
V
V
I
I
I
I
P
T
T
T
C
CM
B
BM
Fig 1. Power derating curve.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a ceramic circuit board, Al
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
junction temperature
operating ambient
temperature
storage temperature
(mW)
P
tot
300
200
100
Rev. 01 — 29 April 2004
0
0
40
2
Conditions
open emitter
open base
open collector
t = 1 ms or
limited by
T
t
T
p
O
j(max)
amb
3
, standard footprint.
80
0.02
300 s;
60 V, 1 A NPN low V
25 C
120
T
amb
001aaa823
[1]
[2]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
Min
-
-
-
-
-
-
-
-
-
-
65
65
160
PBSS4160K
CEsat
Max
5
+150
+150
80
60
1
2
300
1
250
425
150
www.DataSheet4U.com
(BISS) transistor
Unit
V
V
V
A
A
mA
A
mW
mW
C
C
C
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